Lehighton-2000M Sheet Resistance and Mobility Measurement

• Industrial & R&D characterization of wide-bandgap (WBG) and compound semiconductors
• Target materials include GaN/AlGaN, InP, InAs, InGaAs, Graphene, SiC
• Measurement capabilities:
  • Charge carrier mobility
  • Sheet resistance
  • Charge carrier density
  • Measuring uniformity of the above listed parameters across full wafers
• Supports semiconductor device R&D and manufacturing, enabling process optimization and quality assurance through detailed wafer maps of mobility and sheet resistance within short feedback time, within tens of minutes.

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• Non-contact and non-destructive measurements
• RF reflectance + permanent magnet for mobility, Eddy Probe for sheet resistance
• Full-wafer mapping for uniformity and process optimization
• Modular design with 1–3 measurement heads (expandable post-installation)
• Supports wafer autoloading/handling (100–200 mm wafers)
• Recipe-based measurement sequences with customizable positions and point order
• Intuitive GUI; operators require minimal training
• Compliant with SEMI® standards, SECS/GEM communication

Improved measurement ranges:

Wide measurement ranges with excellent repeatability

• Mobility range: 100-20.000 cm²/(V-s)

• Sheet resistance range:0.035-3000 Ω/sq

Platform:

• Dual loading station
• 200 mm mapping stage
• Designed for ISO Class 1cleanroom without FFU
• SAM2 based software compliantto SEMI®

Options:

• Auto-loading of 100-200 mm samples, manual loading of 75 mm samples
• SECS/GEM communication capability
• OCR capability for transparent samples
• Calibration setup wafers

Measured Parameters: 

• On wide variety of compound semiconductor samples:
• GaN/AlGaN, GaAs, InP, InAs, InGaAs, Graphene, SiC

Mobility measurement:

• Microwave Hall power
• Microwave reflectance
• Sheet resistance measurement:
• HI, LO, XLO Eddy current