MCV-530 (L) Mercury Probe System

• Carrier concentration and resistivity profiling for bulk and epitaxial wafers, eg,: Si, SiC, GaN, Ga2O3,

• Dielectric & Interface layer characterization: Complete C-V characterization of high-k and low-k dielectrics on MOS/MIS junctions

• Gate oxide integrity and dielectric breakdown studies (leakage, TDDB, TZDB)

• Electrical characterization of high-mobility heterostructures eg.: AlGaN/GaN 2DEGs,

• Production and quality control in Si, SiC, GaN, GaAs fabs

• Operator-friendly, easy-to-use interface

• Automated batch measurements: Multi-point characterization across a single wafer

• Flexible control: Pre-defined recipes or user-developed scripts

• Fast feedback cycle to R&D

• Data management: Internal software with export to TXT, CSV; built-in visualization and automatic evaluation

• Standalone benchtop system for wafers up to 200 mm for MCV-530L, and 300 mm for MCV-530

• Advanced Mercury Safety: Completely safe, automatic mercury handling with detection of mercury vapor (and optionally droplets) and filtered exhaust

• Compliance: SEMI S2&S8 compliant

• Key Measured Parameters:
  • Schottky profiling
    
    • Dopant concentration profiling (N(W))
    • Resistivity profiling
  • Dielectric & Interface layer characterization
    
    • Flatband voltage, threshold voltage, pinch-off voltage (V_FB,F_TH, V_P)
    • Dielectric layer thickness: Capacitive effective thickness(CET),
            effective oxide thickness (EOT)
    • Dielectric constant (k)
    • Interface trap density (D_IT)
  • Gate oxide integrity (GOI)
    
    • Stepped Votlage  (SVM) and stepped Current measurement (SCM) modes for leakage- and breakdown measurements of dielectrics: I_leakage, V_DB, F_BD
    • Time-dependent dielectric breakdown (TDDB): t_BD, Q_BD,V_BD
    • Time-zero dielectric breakdown (TZDB): Q_BD, V_BD,F_BD, I)
    • Stress-induced leakage current (SILC)
  • High-mobility heterostructure characterization
    
    • 2DEG sheet charge (N_sheet)
    • Pinch-off voltage, threshold voltage (V_P, V_TH)
    • Carrier density profile (N(W))
    • Interface trap density (D_IT)
    • Multi-frequency C-V dispersion
    • Dielectric characterization of the top layer (C-V and I-V)
     
   

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