SRP-170 Spreading Resistance Profiling

The SRP-170 is a cost-effective, spreading resistance profiler designed for silicon semiconductor dopant and resistivity profiling. Ideal for universities, research institutes, and low-volume analytical labs, it offers reliable performance with manual loading and expert-guided operation. The additional sample preparation kit for in-house sample preparation.

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Dopant concentration and resistivity profiling in silicon epitaxial layers
Process monitoring of ion implantation
Real structure and junction depth determination of final devices
Research & education requiring cost-effective profiling

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Value & flexibility: Low consumable costs, ideal for educational and R&D applications
Compact Footprint with effective, high-quality vibration and acoustic isolation
Manual sample loading and stage alignment, with x-axis motorized
Touch-driven, easy-to-use interface for full measurement control
Stand-Alone Bevel sample polishing unit
Option: Bevel Angle Measurement (BAM): Laser sensor for precise bevel angle and depth profiling

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Measurement parameters:

Dopant concentration and resistivity
Carrier density and resistivity profile shape
Junction depth
Transition width
Electrically activated dose

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Resistivity Measurement

Mobility Measurement

Contamination & Impurity Detection

Film Thickness & Optical Properties

Scanning Probe Microscopy & Mechanical Properties

Quartz Crystal Microbalance

Biomolecular Analysis

Single Cell Isolation

SRP-170 Spreading Resistance Profiling

Related Publications

Epitaxial silicon transition zone measurements by spreading resistance profiling and Fourier transform infrared reflectometry

Effects of Ion Channeling and Co-implants on Ion Ranges and Damage in Si: Studies with PL, SRP, SIMS and MC models

Related Whitepapers

From GaAs to SiC: Measuring Resistivity in Compound Semiconductors

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