Publications

R. J. Quinn1, Y. Go2, A.B. Naden 3, A. Bojtor, G. Paráda, A. K. M. A. Shawon 5, K. Domosud 6, K. Refson 6, A. Zevalkink 5, N. Neophytou 2, J. W. G. Bos 3

Hall effect

András Bojtor, Dávid Krisztián, Gábor Paráda, Ferenc Korsós, Sándor Kollarics, Gábor Csősz, Bence G. Márkus, László Forró, Ferenc Simon

uPCD

Emőke Albert*; Péter Basa, Bálint Fodor; Zsófia Keresztes, János Madarász, Péter Márton, Dániel Olasz, Adél Sarolta Rácz, György Sáfrán, Tamás Szabó, Borbála Tegze, Tibor Höltzl, Zoltán Hórvölgyi

EP (ellipsometric porosimetry)

Maximiliano Jesus Jara Fornerod, Alberto Alvarez-Fernandez, Máté Füredi, Anandapadmanabhan A Rajendran, Beatriz Prieto-Simón, Nicolas H. Voelcker, Stefan Guldin

spectroscopic ellipsometry

Baekmin Q. Kim1†, Zachariah Vicars1†, Máté Füredi2,3, Lilia F. Escobedo1, R. Bharath Venkatesh1‡, Stefan Guldin2,4,5, Amish J. Patel1*, Daeyeon Lee1

spectroscopic ellipsometry

Adam J. Lovett*, Máté Füredi, Liam Bird, Samia Said, Brandon Frost, Paul R. Shearing, Stefan Guldin, Thomas S. Miller*

spectroscopic ellipsometry

Tamas Tarjanyi, Andras Gabor Jakab, Marton Sami, Krisztian Bali, Ferenc Rarosi, Maja Laura Jarabik, Gabor Braunitzer, Daniel Palkovics, Lippo Lassila, Edina Lempel, Mark Frater, Sufyan Garoushi

nanoindentation, COMPOUND MATERIAL CHARACTERIZATION

Baekmin Q. Kim, Zachariah Vicars, Máté Füredi, Lilia F. Escobedo, R. Bharath Venkatesh, Stefan Guldin, Amish J. Patel, Daeyeon Lee

ellipsometry, spectroscopic ellipsometry, spectroscopic ellipsometry, mapping, in-situ heating, vacuum chamber, NANO SURFACE CHARACTERIZATION

Xian Xiao, Aimei Yang, Hanbin Zhang, Demian Park, Yangdong Wang, Balint Szabo, Edward S. Boyden, Kiryl D. Piatkevich

infrared, voltage measurement

D. Ullrich, Z. Bozóki, B. M. Kovács, Ö. Sepsi, F. Ujhelyi, Z. Zolnai, J. Szivós, G. Nádudvari, L. Balogh

Ion Implantation, Photomodulated Reflection measurements, Silicon (Si), silicon carbide (SiC), ION IMPLANT MONITORING

Balogh Imre, Kiss Roberta Zsófia, Egri Dávid

spectroscopic ellipsometry

Máté Füredi, Cristina V. Manzano, András Marton, Bálint Fodor, Alberto Alvarez-Fernandez,*

EP

Katalin Csonti, Csilla Fazakas, Kinga Molnár, Imola Wilhelm, István A. Krizbai, Attila G. Végh

adhesion assay, Zeiss AFM, single-cell force spectroscopy

Gergely Havasi, Dávid Krisztián, Ferenc Korsós, Shaoyong Fu

laser controlled photoconductance decay (PCD)

Márk Windisch 1,2 , Dániel Selmeczi , Ádám Vida and Zoltán Dankházi

ion bombardment; silicon; ripple formation; amorphous layer; ellipsometry

Gyorgy Nadudvari, Zoltan Kiss, Csenge Dobos, Lukács Bokody, Zsolt Kovács, Gábor Molnár, Dénes Száz, Silvia Poppa, Imre Balogh

IR

Gergely Havasi, Dávid Krisztián, (Zs. Gombás -BME-, Z. Ádám -EcoSolifer Heterojunction Ltd.), Ferenc Korsós

laser controlled photoconductance decay (PCD)

A. Suto, P. Basa, Gy. Nadudvari, S. Poppa

cmp

DR. JAKAB ANDRÁS, DR. VÁNKAY KATA LILLA, DR. TARJÁNYI TAMÁS, GULYÁS GÁBOR, BALI KRISZTIÁN DÉZSI PÁL PATRIK, SÁMI MÁRTON DR. FRÁTER MÁRK

nanoindentation

Andás Bojtor, Dávid Krisztián, Ferenc Korsós, Sándor Kollarics (3,4), Gábor Paráda, Márton Kollár (5), Endre Horváth (5), Xavier Mettan (5), Bence G. Márkus (6, 3, 4), László Forró (6), Ferenc Simon (6, 7, 1, 3)

perovskites; photoconductivity; photonic applications; charge-carrier lifetime

Roger Loo, Anjani Akula, Yosuke Shimura, Clement Porret, Erik Rosseel, Thomas Dursap, Andriy Yakovitch Hikavyy, Matteo Beggiato, Janusz Bogdanowicz, Alex Merkulov, Mustafa Ayyad, Han Han, Olivier Richard, Andrea Impagnatiello, Dong Wang, Keisuke Yamamoto, Tamás Sipőcz, Árpád Kerekes, Hans Mertens, Naoto Horiguchi and Robert Langer

rt pl

Aysha A. Riaz, Curran Kalha Maria Basso, Máté Füredi, Anna Regoutz

spectroscopic ellipsometry

Mustafa Togay; Luksa Kujovic; Rob Ellis; Martin Bliss; Kieran Curson; Gabor Parada; Eric Don; Kurt L. Barth; J. Michael Walls; Jake W. Browers

Hall effect

Béla Hopp, Márton Sámi, Tamás Gera, Judit Budai, Gergő Ballai, Lázár Tóth, János Bohus, Gábor Gulyás, Tamás Szörényi, Tamás Smausz

nanoindentation, Surface, Surface measurement, surface treatment, NANO SURFACE CHARACTERIZATION

Jorge Luis Vazquez-Arce, Tibor Suta, Bálint Fodor, László Makai, Oscar Contreras, Amin Bahrami, Kornelius Nielsch, Hugo Tiznado

Ellipsometers, ellipsometry, optical inspection, oxidation, spectroscopic ellipsometry, Optical metrology, atomic layer deposition

Péter Márton, Adél Rácz, Beáta Szolnoki, János Madarász, Norbert Nagy, Bálint Fodor, Péter Basa, János Rohonczy, Zoltán Hórvölgyi

ellipsometry, XPS, ellipsometry porosimetry, THIN FILM THICKNESS MEASUREMENT, FTIR REFLECTOMETRY, Porosimetry, nanostructural coating, atomic layer deposition

András Bojtor, Dávid Krisztián, Ferenc Korsós, Sándor Kollarics, Gábor Paráda, Thomas Pinel, Márton Kollár, Endre Horváth, Xavier Mettan, Hidetsugu Shiozawa, Bence G. Márkus, László Forró, Ferenc Simon

carrier density, carrier lifetime, Carrier mobility, Charge Carrier Lifetime, Charge carriers, photovoltaics, PV, recombination, Charge carrier density, PDL Hall

Mikio Fukuhara, Tomonori Yokotsuka, Tetsuo Samoto, Masahiko Kumadaki, Mitsuhiro Takeda, Toshiyuki Hashida

Hall effect measurements, Materials science, Organic contamination, semiconductor, semiconductor materials, Semiconductor Devices, NANO HARDNESS, PDL Hall

Zsolt Kovács, Csanád Ö. Boros, Teodóra N. Kovács, Zsolt Kovács, ZoltánT. Kiss

optical inspection, Silicon (Si), POLARIZED INFRARED IMAGING, VISUAL INSPECTION

E. E. Najbauer, L. Sinkó, Sz. Biró, Z. Durkó, P. Basa

carrier density, epitaxial layer, semiconductor, Silicon (Si), SRP-2100, SRP, FTIR REFLECTOMETRY

Boglárka Dikó, Roberta Zsófia Kiss, Dávid Egri, Emeric Balogh

Defect detection, defect inspection, defects, ellipsometry, Materials science, spectroscopic ellipsometry

Samu Viktor, Kerekes Árpád, Pongrácz Anita, Durkó Zsolt

microPL, JPV, photo-modulated reflectance

Jimmy Thörnberg1,a*, Gennadi Polisski2,b, Egidio Carria1,c, Mathias Isacson1,d, Björn Magnusson1,e

UV-photoluminescence (UV-PL), surface voltage mapping

Marshall Wilson [M. Wilson1, C. Almeida1, I. Shekerov1, B. Schrayer1, A. Savtchouk1, B. Wilson2 and J. Lagowski1]

Doping, epitaxial 4H-SiC, corona noncontact C-V, CnCV

Máté Füredi, Alberto Alvarez-Fernandez, Maximiliano Jesus Jara Fornerod, Bálint Fodor, and Stefan Guldin

spectroscopic ellipsometry, EP

Máté Füredi, Cristina V. Manzano, András Marton, Bálint Fodor, Alberto Alvarez-Fernandez*, and Stefan Guldin*

"Mustafa Togay, Rachael C. Greenhalgh, Kerrie Morris, Xiaolei Liu, Luksa Kujovic, Luis C. Infante-Ortega, Nicholas Hunwick, Adam M. Law, Tushar Shimpi, Sampath S. Walajabad, Eric Don, Gabor Parada, Kurt L. Barth, J. Michael Walls and Jake W. Bowers"

Hall effect

Márk Fráter, János Grosz, András Jakab, Gábor Braunitzer, Tamás Tarjányi, Gábor Gulyás, Krisztián Bali, Paula Andrea Villa-Machado, Sufyan Garoushi, András Forster

Materials science, nanoindentation, COMPOUND MATERIAL CHARACTERIZATION

M. Wilson, C. Almeida, I. Shekerov, B. Schrayer, A. Savtchouk, B. Wilson and J. Lagowski

doping, Epitaxy, silicon carbide (SiC), COMPOUND MATERIAL CHARACTERIZATION, NON-CONTACT C-V PROFILING

Dávid Krisztián; Ferenc Korsós; Enikő Kis; Gábor Paráda; Péter Tüttő

carrier lifetime, lifetime measurements, photoconductive decay, solar cells

Dávid Krisztián, Ferenc Korsós, Gergely Havasi

carrier lifetime, Carrier mobility, Charge carriers, concentration profile, lifetime measurements, photoconductive decay, silicon solar cells

András Bojtor, Gábor Paráda, Péter Tüttő, Hajnalka Korka, Kinga Szőke, Ferenc Korsós

Hall effect measurements, photoconductivity, IGZO ELECTRICAL CHARACTERIZATION, PDL Hall

Máté Füredi, Bálint Fodor, András Marton, Alberto Alvarez-Fernandez, Aysha ARiaz, Curran Kalha, Anna Regoutz, Stefan Guldin, Péter Basa

Ellipsometers, ellipsometry, ellipsometry porosimetry, ELLIPSOMETRIC POROSIMETRY, ELLIPSOMETRIC POROSIMETRY (R&D), Mesoporous silica films, Porosimetry, mesoporous

Eric Tucker,Frank Ramos,Samuel Frey,Robert J. Hillard,Péter Horváth,Gyula Zsákai,Attila Márton

Hg CV

Eric Tucker, Frank Ramos, Samuel Frey, Robert J. Hillard, Péter Horváth, Gyula Zsákai, Attila Márton

dielectric characterization, dielectric charge, MERCURY C-V PROFILING, 2DEG sheet charge, pinch-off voltage, mercury gate

Dávid Krisztián*, Ferenc Korsós, Ilias Saegh, Gábor Paráda, Martin Kovács, Zita Verdon, Csaba Jobbágy, Péter Tüttö, Xueqian Dong, Hao Deng, Shasha Wang and Xiaobo Chen

carrier lifetime, eddy current testing, photoconductive decay, E-PCD CARRIER LIFETIME FOR MONO-Si

O. Kéri, Á. Kerekes, J. Szívós, A. Sütő, F. Korsós, G. Nádudvari & Z. Zolnai

annealing, Ion Implantation, laser beam annealing, Mapping, plasma ion implantation, Silicon (Si), Silicon

P. Basa, B. Fodor, Zs. Nagy, B. Oyunbolor, A. Hajtman, S. Bordács, I. Kézsmárki, A. Halbritter, Á. Orbán

ellipsometry, rotating compensator, mueller matrix, spectroscopic ellipsometer

László Makai, Benjamin Kalas, György Tiborcz

Ellipsometers, ellipsometry, Interfaces, spectroscopic ellipsometry, Surface, Surface measurement

D. Krisztián, F. Korsós, M. Kovács, F. Ujhelyi, P. Tüttö

depth profile, eddy current testing, photovoltaic cells, PV, silicon solar cells, solar cells, EU PVSEC, EU PVSEC, European Photovoltaic Solar Energy Conference and Exhibition, Silicon PV, Semilab to present paper at Silicon PV, Silicon

Ferenc Korsós, Gábor Paráda, Shaoyong Fu, Carmelo Connelli, Marcello Sciuto, and Serafino B. Lo Presti

Electric measurements, junction photovoltage technique, semiconductor junctions, semiconductor thin films, solar cells, thin films, NON-CONTACT SHEET RESISTANCE MEASUREMENT

András Bojtor, Sándor Kollarics, Bence Gábor Márkus, Andrzej Sienkiewicz, Márton Kollár, László Forró, and Ferenc Simon

carrier density, photoconductivity, temperature, Temperature dependence, Phase Transformation of Si, Photonic integrated circuits

Jacopo Frascaroli; Marta Tonini; Selene Colombo; Luisito Livellara; Luca Mariani; Paolo Targa; Roberto Fumagalli; Viktor Samu; Máté Nagy; Gábor Molnár; Áron Horváth; Zoltán Bartal; Zoltán Kiss; Tamás Sipõcz; Isabella Mica

crystal defects, Defect detection, epitaxial layer, photoluminescence, Photoluminescence Imaging, semiconductor epitaxial layers, solid phase epitaxial growth, Micro-Photoluminescence Imaging, image segmentation

Jacopo Frascaroli, Selene Colombo, Roberto Fumagalli, Isabella Mica, Luisito Livellara, Viktor Samu, Gábor Molnár

crystal defects, photoluminescence, Photoluminescence Imaging, Micro-Photoluminescence Imaging

Jacopo Frascaroli; Marta Tonini; Selene Colombo; Luisito Livellara; Luca Mariani; Paolo Targa; Roberto Fumagalli; Viktor Samu; Máté Nagy, Gábor Molnár, Áron Horváth, Zoltán Bartal, Zoltán Kiss, Tamás Sipőcz, Isabella Mica

crystal defects, epitaxial layer, photoluminescence, Silicon (Si), neural network, image segmentation

Jacopo Frascaroli, Selene Colombo, Roberto Fumagalli, Isabella Mica, Luisito Livellara, Viktor Samu, and Gábor Molnár

crystal defects, photoluminescence, dislocations, buried defects, Deep Trenches, neural network

Romain DURU, Isabella MICA, Jacopo FRASCAROLI, Pierre BELLANGER

crystal defects, Defect detection, photoluminescence, Insulated Gate Bipolar Transistor (IGBT)

G. Paráda, F. Korsós, A. Bojtor, J-W. G. Bos, E. Don, J. W. Bowers, M. Togay

Hall effect measurements, mobility measurement, PDL Hall, AC magnetic field

D. Krisztián, F. Korsós, I. Saegh, G. Paráda, P. Tüttő, X. Dong and H. Deng, S. Wang, X. Chen

carrier lifetime, Ingot, Monocrystalline, recombination, Silicon (Si), E-PCD CARRIER LIFETIME FOR MONO-S

László Makai, Tero Lehto, Bálint Fodor, Peter King

doping, Electrical properties, spectroscopic ellipsometry, thin films, atomic layer deposition

Cristina Sanna, Patrick Taylor, Robert Hillard, Samuel Frey, Dan McDonald, Jonny Hoglund, Gyula Zsakai, Attila Marton and Peter Horvath

Epitaxial silicon, mercury probe, surface treatment, MERCURY C-V PROFILING, Capacitance-voltage characteristics, p-type, pre-treatment chamber

Lenke Kócs, Borbála Tegze, Emőke Albert, Csaba Major, András Szalai, Bálint Fodor, Péter Basa, György Sáfrán, Zoltán Hórvölgyi

porous silica coatings, spectroscopic ellipsometry, ELLIPSOMETRIC POROSIMETRY, mesoporous, anti-reflective coatings

T. Szarvas, Sz. Pothorszky, D. Erdei, G. Molnár, Gy. Nádudvari, O. Almásy, Sz. Spindler, R. Kretschmer, and S. Bauer

crystal defects, quality control, LIGHT SCATTERING TOMOGRAPHY, Semiconductor Devices, Optical metrology

T. Szarvas, G. Molnár, Gy. Nádudvari, Sz. Tóth, O. Almásy, Sz. Spindler, D. Erdei, Sz. Pothorszky, R. Kretschmer, and S. Bauer

Bulk micro defects, Low-angle Light Scattering Tomography, low-angle illumination

J.P. Gambino; D. Price; R. Jerome; H. Ziad; T. Frank; A. Kerekes; V. Samu; A. Ross; Z. Kiss; J. Byrnes

Characterisation, CMOS integrated circuits, dielectric characterization, Non-contact, non-contact C-V, photoluminescence, Silicon (Si), SOI

Dániel Olasz, János Lendvai, Attila Szállás, Gábor Gulyás, Nguyen Quang Chinh

nanoindentation

A. Pongrácz, J. Szívós, F. Ujhelyi, Zs. Zolnai, Ö. Sepsi, Á. Kun, Gy. Nádudvari, J. Byrnes, Leonard M. Rubin and Edward D. Moore

doping profile, implant dose, Ion Implantation, laser beam annealing, Photomodulated Reflection measurements, Reflectivity

Dániel Olasz, János Lendvai, Attila Szállás, Gábor Gulyás, Nguyen Quang Chinh

nanoindentation, NANO SURFACE CHARACTERIZATION

Alexandre Savtchouk, Marshall Wilson, John D’Amico, Carlos Almeida, Jacek Lagowski

corona charge, non-contact C-V, profiling, silicon carbide (SiC), AlGaN, GaN

Alexandre Savtchouk*, Marshall Wilson, John D’Amico, Carlos Almeida, Andrew Hoff, Jacek Lagowski

corona charge, CV, dielectric characterization, Interface, silicon carbide (SiC), COMPOUND MATERIAL CHARACTERIZATION, GaN

Ferenc Korsós, Géza László, Péter Tüttő, Sebastien Dubois, Nicolas Enjalbert, Krisztián Kis-Szabó, Attila Tóth

Characterisation, inversion layer sheet resistance, junction photovoltage technique, Non-contact, PV, SHEET RESISTANCE MEASUREMENT

Attila Ábrahám, Lenke Kócs, Emőke Albert, Borbála Tegze, Beáta Szolnoki, Norbert Nagy, György Sáfrán, Péter Basa, Zoltán Hórvölgyi

ELLIPSOMETRIC POROSIMETRY, Atomic Force Microscope (AFM), sol-gel coating, hybrid silica, antireflection, water-repellence

M. Wilson, D. Greenock, D. Marinskiy, A. Savtchouk, A. Ross, C. Almeida, B. Schrayer, J. D’Amico and J. Lagowski

Defect detection, photoluminescence, silicon carbide (SiC)

Windisch M., Buza G., Maloveczky A., Vida Á., Selmeczi D., Dankházi Z.:

Si surfaces, spectroscopic ellipsometry, surface treatment

Janecska, Máté; Kovács, Zsolt; Pongracz, Anita;Tallian, Miklos

defect inspection, POLARIZED INFRARED IMAGING, FinFET, lithography

Borbála Tegze, Emőke Albert, Bálint Fodor, György Sáfrán, Zoltán Hórvölgyi

ELLIPSOMETRIC POROSIMETRY, sol-gel coating, mesoporous, photodegradation, dye association, dye adsorption, titania

Alexander Savtchouk, Marshall Wilson, Carlos Almeida, Dmitriy Marinskiy, Robert Hillard, Jacek Lagowski

CV, non-contact C-V, Non-Contact Measurement, silicon carbide (SiC)

KÓCS Lenke, ZÁMBÓ Dániel, ALBERT Emõke, BASA Péter, SÁFRÁN György és HÓRVÖLGYI Zoltán

ELLIPSOMETRIC POROSIMETRY, THIN FILM CHARACTERIZATION, nanostructural coating, nanochemical method

B. Greenwood, J. Kimball, S. Sridaran, K. Truong, A. Lee, S. Menon, J.P. Gambino, L. Jastrzebski, G. Nadudvari, L. Roszol, M. Nagy, G. Molnar, Z. Kiss, A. Pongracz, J. Byrnes

CMOS integrated circuits, defects, implant, Ion Implantation, photoluminescence, Micro-Photoluminescence Imaging

L. Jastrzebski, R. Duru, D. Le-Cunff, M. Cannac S. Joblot, I. Mica, M.L.Polignano, A.Galbiati, P. Monge Roffarello,G. Nadudvari, Z. Kiss, I. Lajtos, A. Pongracz, G. Molnár, M. Nagy, L. Dudás, P. Basa, B.Greenwood, J.Gambino

crystal defects, defect inspection, Ion Implantation, Photoluminescence Imaging, process monitoring, Deep Trenches

Ferenc Korsós, Péter Tüttő, Ilias Saegh, Krisztián Kis-Szabó, and Attila Tóth

4pp, diffusion, junction photovoltage technique, photovoltaics, process monitoring

Emeric Balogh, Peter Basa, Attila Suto, Benjamin Powell, Anna Bölcskei-Molnár, and Szilvia Biró

ellipsometry, spectroscopic ellipsometry

F. Ujhelyi, A. Pongracz, Á. Kun, J. Szívós, B. Bartal, B. Fodor, A. Bölcskei-Molnár, Gy. Nádudvari, J. Byrnes, L. M. Rubin

implant dose, in-line monitoring, Ion Implantation, Photomodulated Reflection measurements, semiconductor

Akshay Singh, Yifei Li, Balint Fodor, Laszlo Makai, Jian Zhou, Haowei Xu, Austin Akey, Ju Li and R. Jaramillo

ellipsometry, visible spectra, Transmission electron microscopy, Density functional theory, Photonic integrated circuits, Transition metal chalcogenides, Optical metrology, Crystalline solids, Optical electronics

Arpad Jakab, John Byrnes, Laszlo Makai, Audrey Engelsberg, Andrew Findlay, Alok Vaid, Nicholas Pieniazek, John Barker, Jeffrey Wood, Peter Rutka, Peter Basa, Jack Downey

ellipsometry, Metrology, reflectometry, semiconductor device measurement

L. Jastrzebski Semilab USA LLC Tampa, FL G. Nadudvari, D. T. Cseh, L. Roszol, G. Molnar, I. Lajtos Semilab ZRT Budapest, Hungary

uPL

I. Mica, M. L. Polignano, P. Bacciaglia, D. Brazzelli, D. Cseh, A. Galbiati, S. Grasso, M. Juhel, Z. T. Kiss, P. Monge Roffarello, E. Tomezzoli and A. M. Torti

uPL, TEM

Á Kun, J Szívós, E Kis, L.M. Rubin, T. Szarvas, A. Pongrácz, O. Almási, J. Byrnes, Gy. Nádudvari, Sz. Spindler, R. Piros, F. Ujhelyi

photomodulated reflectance

Marshall Wilson, Alexandre Savtchouk, John D'Amico, Bret Schrayer, Dmitriy Marinskiy, Piotr Edelman, Carlos Almeida, Troy Zajac, Andrew David Findlay, Jacek Lagowski

contamination, Diffusion Length, heavy metal contamination, Minority Carrier Diffusion Length, Silicon (Si), surface photovoltage, wafer mapping

Geoffrey Gregory, Marshall Wilson, Haider Ali, Kristopher O Davis

annealing, semiconductor, silicon compounds, solar cells, thin films, thermal stability, molybdenum compounds, atomic layer deposition

Sara Bakhshi, Ngwe Zin, Marshall Wilson, Ismail Kashkoush, Kristopher O Davis, Winston V Schoenfeld

cleaning technology, passivation, semiconductor, silicon solar cells, UV-Ozone oxide

Sagnik Chakraborty, Ying Huang, Marshall Wilson, Armin G Aberle, Joel B Li

phosphorus, silicon solar cells

Sara Bakhshi, Ngwe Zin, Haider Ali, Marshall Wilson, Debashis Chanda, Kristopher O Davis, Winston V Schoenfeld

cleaning technology, passivated surface, photovoltaics, UV-Ozone oxide

M.L. Polignano, A. Galbiati, I. Mica, D. Magni, D. Cseh, F. Jay, P. Basa, N. Laurent, I. Lajtos, G. Molnár, L. Dudás, L. Roszol, L. Jastrzebski

Carrier diffusion length, metal contamination, photoluminescence

I. Mica, M. L. Polignano, P. Bacciaglia, D. Brazzelli, D. Cseh, A. Galbiati, S. Grasso, M. Juhel, Z. T. Kiss, P. Monge Roffarello, E. Tomezzoli, A. M. Torti

Silicon, P implantation sequences, Implantation defects, annealing

F. Korsós, L. Roszol, F. Jay, T. Szarvas, Z. Kiss, A. Szabó, I. Soczó, Gy. Nádudvari, N. Laurent

Czochralski, Bulk micro defects, Thermal history, PERT solar cells, carrier lifetime

L. Jastrzebski, G. Nadudvari, D. T. Cseh, L. Roszol, G. Molnar, I. Lajtos

Micro-Photoluminescence Imaging, Dislocation Generation, Semiconductor Devices, Deep Trenches, Wafer Fabrication

Marshall Wilson, Andrew Findlay, Alexandre Savtchouk, John D'Amico, Robert Hillard, Fumimasa Horikiri, Jacek Lagowski

Alexander Savtchouk, Marshall Wilson, Jacek Lagowski

Corona-Kelvin Metrology, minority carrier lifetime, non-contact C-V, photoconductive decay, silicon carbide (SiC), ELECTRICAL CHARACTERIZATION OF DIELECTRICS AND INTERFACES

Marshall Wilson, Bret Schrayer, Alexandre Savtchouk, Bob Hillard, Jacek Lagowski

non-contact C-V, surface voltage, piezoelectric polarization, AlGaN, GaN