SE-2000 Spectroscopic Ellipsometry

• Ideal for research labs, universities, pilot production, and optics manufacturers
• Applications include:
  • photonics (LEDs, optronics, III-V devices),
  • photovoltaics (thin films, solar cells, TCOs),
  • organics (OLED, OPV, sensors),
  • semiconductors (high-k dielectrics, gate oxides, epi-layers),
  • flat panel displays, and general materials (ferroelectrics, fuel cells, graphene, 3D periodic structures)
  • liquid and free liquid surfaces
• Measurement modes cover thin film thickness, refractive index, band gap, multilayer stacks, anisotropic materials, porosity, reflectance/transmittance, and more
• Unique features include:
  • independent arm angle selection,
  • Non-destructive optical elimination of backside reflection on transparent samples,
  • combined ellipsometry / 16 element Mueller-matrix / scatterometry / polarimetry measurement modes,
  • Feed-forward analysis for subsequent thin film deposition process monitoring
  • and FTIR ellipsometer option on the same goniometer

• Highly versatile modular spectroscopic ellipsometer with over 70 configurations
• Covers the widest spectral range in a single system: 190 nm (Deep UV) to 25 µm (Mid-IR)
• Supports advanced thin film analysis, optical property characterization, and complex multilayer stacks
• Partial or full automation: manual / automated sample loading with optional automated wafer mapping
• Recipe-driven with modern graphical user interface
• Measurement speed: from 167 ms to several seconds per point (typically 1–10 s)
• Non-contact, non-destructive measurements

• Modular and upgradeable, supporting many hardware/software options including IR, NIR, cryostats, mapping systems, etc.

‍

• Wavelength range:
  
  • 190 nm – 2500 nm for the Fast Acquisition mode;
  • 193 – 2400 mm for the High-resolution mode
    ‍
• Angle of incidence range (UV-VIS-NIR): 12° - 90°
• Angle of incidence range (With camera): 25° - 90°
• Pixels in UV-VIS: 1024
• Pixels in NIR: 512
• Typical measurement time: 1-10 sec (DUV to NIR)
• Standard Reference Material: (~1200 Å SiO₂ on Si)

‍