This study uses photoluminescence (PL) and other carrier-recombination sensitive probes in combination with spreading resistance profiling (SRP), SIMS and IMSIL MC-calculations to monitor the ion range and damage levels in highly-channeled and random beam orientation 7.5 MeV B and 10 MeV P and As profiles and various combinations of co-implants with 50 keV Phosphorus implants in Silicon(100). The effects of annealing on the 10 MeV profiles showed the strong shifts in PL data from implant damage in the as-implanted and annealed samples. Curious “intermittencies” were seen in the PL signals from MeV implant defect centers.
