A number of More-than-Moore (MtM) devices use Silicon-on-Insulator (SOI) wafers, including power devices and CMOS image sensors. Non-contact capacitance-voltage (CV) and photoluminescence measurements are well established for characterization of dielectrics and minority carrier lifetime on bulk Si wafers. In this study, we extend these measurements to More-Than-Moore (MtM) Silicon-On-Insulator (SOI) device wafers.
