The photo-modulated reflectance (PMR) technique is extensively utilized for monitoring ion implantation processes in Si wafers and a tool applicable to SiC wafers is under continuous development at Semilab Ltd. In this work, we present the results measured by our Semilab PMR-2200C device, designed primarily for ion-implanted SiC wafer monitoring. Moreover, the same device is also suitable for effectively monitor ion-implanted Si wafers as well. Under appropriate measurement conditions, monotonous trend of the PMR signal vs. implantation dose, e.g., the amount of damage, can be observed in a wide dose range, both for SiC and Si. Therefore, PMR is an effective non-destructive, non-contact tool for high-throughput process monitoring of the as-implanted wafers.
