Publications

L. Pfitzner, A. Nutsch, R. Oechsner, M. Pfeffer, E. Don, C. Wylon, M. Hurlebaus

Metrology, semiconductor manufacturing, equipment

C. Kohn, E. Don, P. Tüttő, A. Pap, T. Pavelka

sheet resistance, ultra shallow implants, junction photovoltage technique

T. Pavelka, A. Pap, Gy. Szilágyi

lifetime, Silicon (Si), photovoltaics

O. Engström, M.Kaniewska, W.Jung, M.Kaczmarczyk

Deep level transient spectroscopy, quantum dots, tunneling, conduction bands, electric field

J-L. Everaert, X. Shi, A. Rothschild, M. Schaekers, E. Rosseel, T. Pavelka, E. Don, S. Vanhaelemeersch

HfSiO, Nitridation, corona charge, Gate dielectric, Gate leakage

A. Bertuch, W. Smith, K. Steeples, R. Standley, A. Stefanescu, R. Johnson

surface photovoltage, monitor, Ion Implantation, layer-transfer, SOI, wafer mapping, hydrogen and helium implants

E. Tsidilkovski, K. Steeples

Non-contact, photoelectric measurement, silicon film thickness, SOI

K. Gurcan, A. Bertuch, K. Steeples

micro-uniformity, Metrology, implant, surface photovoltage, high-resolution mapping, electrical test, Ion Implantation, Surface charge, Testing procedures, Critical currents

A. Bertuch, K. Steeples

NIST traceable, surface photovoltage, standard, reference wafer, Electric measurements, Electrical resistivity, Metrology, Epitaxy, Silicon (Si)

M. Wilson, A. Savtchouk, J. D’Amico, I. Tarasov, L. Jastrzebski, J. Lagowski

Copper (Cu), Contact Potential Difference (CPD), ac-surface photovoltage measurement

A. Belyaev, D. Marinskiy, M. Wilson, J. D’Amico, L. Jastrzebski, J. Lagowski

corona - Kelvin, scribe lines, plasma nitridation, Dielectrics, tunneling, Valence bands, Electric measurements, Metrology

J.H. Kim, C.H. Kim, H.W. Yoo, H.L. Kim, S.H. Son, C.H. Lee, T.K. Kim, J. D’Amico, M. Wilson, M. Wilson, S.H. Kim, S.H. Park

corona - Kelvin, DRAM production wafers, SASS, ZAZ dielectric

R.J. Hillard, C. Win Ye, M.C. Benjamin, K. Suguro

doping profile, probes, semiconductor junctions

L. Pfitzner, A. Nutsch, R. Oechsner, M. Pfeffer, E. Don, C. Wylon, M. Hurlebaus

Metrology, semiconductor manufacturing, equipment

C. Kohn, E. Don, P. Tüttő, A. Pap, T. Pavelka

sheet resistance, ultra shallow implants, junction photovoltage technique

T. Pavelka, A. Pap, Gy. Szilágyi

lifetime, Silicon (Si), photovoltaics

O. Engström, M.Kaniewska, W.Jung, M.Kaczmarczyk

Deep level transient spectroscopy, quantum dots, tunneling, conduction bands, electric field

J-L. Everaert, X. Shi, A. Rothschild, M. Schaekers, E. Rosseel, T. Pavelka, E. Don, S. Vanhaelemeersch

HfSiO, Nitridation, corona charge, Gate dielectric, Gate leakage

F. Pennella, P. Pianezza, E. Tsidikovski, G. Krzych, K. Steeples

CMOS integrated circuits, annealing, Ion Implantation, photovoltaic effects, process control, semiconductor device manufacturing, semiconductor device measurement, voltage measurement, carrier lifetime

A. Bertuch, W. Smith, K. Steeples, R. Standley, A. Stefanescu, R. Johnson

surface photovoltage, monitor, Ion Implantation, layer-transfer, SOI, wafer mapping, hydrogen and helium implants

E. Tsidilkovski, K. Steeples

Non-contact, photoelectric measurement, silicon film thickness, SOI

K. Gurcan, A. Bertuch, K. Steeples

micro-uniformity, Metrology, implant, surface photovoltage, high-resolution mapping, electrical test, Ion Implantation, Surface charge, Testing procedures, Critical currents

A. Bertuch, K. Steeples

NIST traceable, surface photovoltage, standard, reference wafer, Electric measurements, Electrical resistivity, Metrology, Epitaxy, Silicon (Si)

M. Wilson, A. Savtchouk, J. D’Amico, I. Tarasov, L. Jastrzebski, J. Lagowski

Copper (Cu), Contact Potential Difference (CPD), ac-surface photovoltage measurement

A. Belyaev, D. Marinskiy, M. Wilson, J. D’Amico, L. Jastrzebski, J. Lagowski

corona - Kelvin, scribe lines, plasma nitridation, Dielectrics, tunneling, Valence bands, Electric measurements, Metrology

J.H. Kim, C.H. Kim, H.W. Yoo, H.L. Kim, S.H. Son, C.H. Lee, T.K. Kim, J. D’Amico, M. Wilson, M. Wilson, S.H. Kim, S.H. Park

corona - Kelvin, DRAM production wafers, SASS, ZAZ dielectric

C Almeida, A Byelyayev, J D Amico, A Findlay, L Jastrzebski, J Kochey, J Lagowski, D Marinskiy, A Savtchouk, M Wilson

corona charge, Corona-Kelvin Metrology, high-k dielectrics, Non-Contact Measurement

Marshall Wilson, Dmitriy Marinskiy, Anton Byelyayev, John D'Amico, Andrew Findlay, Lubek Jastrzebski, Jacek Lagowski

Corona-Kelvin Metrology, Dielectrics, Non-Contact Measurement, semiconductor manufacturing

J.D. Caldwell, P. B. Klein, O. Glembocki, K. Hobart, F. Kub, A. Pap, T. Pavelka, A. Shrivastava, Z. Zhang, T. Sudarshan, G. Webster

carrier lifetime, silicon carbide (SiC), epilayer

E. Don, A. Pap, T. Pavelka, P. Tüttő, C. Wyon, C. Laviron, R. Oechsner, M. Pfeffer

annealing, Electrical resistivity, Metrology, Spatial resolution

J. Borland, S. Shishiguchi, A. Mineji, W. Krull, D. Jacobson, M. Tanjyo, W. Lerch, S. Paul, J. Gelpey, S. McCoy, J. Venturini, M. Current, V. Faifer, R. Hillard, M. Benjamin, T. Walker, A. Buczkowski, Z. Li, J. Chen

boron, boron compounds, elemental semiconductors, Ion Implantation, laser beam annealing, semiconductor doping, semiconductor junctions, Silicon (Si), solid phase epitaxial growth

C. Krueger, C.H. Ng, Z. Zhao, G. Krytsch

Ion Implantation, Surface charge, High current technology

K. Steeples, E. Tsidilkovski

Silicon (Si), Metrology, photovoltage, defects, lifetime

R.J. Hillard, M.V. Benjamin, W.C. Ye, J.O. Borland

J. Lossen, L. Mittelstadt, S. Dauwe, K. Lauer, C. Beneking

carrier lifetime, POCl3, diffusion

D Marinskiy, P Edelman, C Almeida, G Polisski, J D’Amico, M Wilson, L Jastrzebski, J Lagowski

depth profile, doping, Electrical properties, Epitaxial silicon, Kelvin probe, semiconductor, semiconductor epitaxial layers

J. Borland, R. Hillard, M. Benjamin, E. Gurer

implant dose, activation monitoring, implant, activation

J.D. Caldwell, A. Pap, A. Shrivastava, Z. Zhang, P.B. Klein, T. Pavelka, T. Sudarshan, O.J. Glembocki, K. Hobart, F. Kub

silicon carbide (SiC), photoconductive decay, epitaxial layer

R.J. Hillard, M.C. Benjamin, G.A. Brown

Metrology, MOS

M. Yli-Koski, H. Savin, E. Saarnilehto, A. Haarahiltunen, J. Sinkkonen, G. Berenyi, T. Pavelka

Copper (Cu), Silicon (Si), surface photovoltage, Microwave Photoconductive Decay (μ-PCD)

H. Vainola, E. Saarnilehto, M. Yli-Koski, A. Haarahiltunen, J. Sinkkonen, G. Berenyi, T. Pavelka

Copper (Cu), illumination, precipitation, Silicon (Si), annealing

P. Edelman, D. Marinskiy, C. Almeida, J.N. Kochey, A. Byelyayev, M. Wilson, A. Savtchouk, J. D’Amico, A. Findlay, L. Jastrzebski, J. Lagowski

Non-contact, CV, Scribe line testing, Advanced dielectrics, corona discharge, Kelvin force

R.J. Hillard, C. Win Ye, L. Tan, M.C. Benjamin, R.G. Mazur

sheet resistance, 4pp, ultra-shallow junction (USJ)

R.J. Hillard, J. Borland, C. Win Ye

sheet resistance, 4pp, ultra-shallow junction (USJ)

R.J. Hillard, R.G. Mazur, W.J. Alexander, C. Win Ye, M.C. Benjamin, J.O. Borland

sheet resistance, 4pp, ultra-shallow junction (USJ)

M. Wilson, J. Lagowski, J. D'Amico, P. Edelman, A. Savtchouk

High dielectric constant materials, Materials science, High-k gate dielectrics

E. Tsidilkovski, K. Crocker, K. Steeples

CMOS integrated circuits, arsenic, boron, Ion Implantation, process monitoring, surface photovoltage

P. Edelman, A. Savtchouk, M. Wilson, J. D'Amico, J.N. Kochey, D. Marinskiy, J. Lagowski

non-contact C-V, ultra-thin dielectrics, Silicon (Si)

J. Lagowski, A. Aleynikov, A. Savtchouk, P. Edelman

surface photovoltage, Minority Carrier Diffusion Length

P. Edelman, A. Savtchouk, M. Wilson, J. D’Amico, J.N. Kochey, D. Marinskiy, J. Lagowski

E. Rüland, P. Fath, T. Pavelka, A. Pap, K. Peter, J. Mizsei

diffusion, eddy current testing, Electrical resistivity, elemental semiconductors, phosphorus, quality control, Silicon (Si), solar cells, surface photovoltage

H-Y. Chung, S-H Lee, Y-H. Kim, K-S. Lee, D-H. Kim

metallic impurities distribution, etching technique, ET-AAS

D.K. Schroder, B.D. Choi, S.G. Kang, W. Ohashi, K. Kitahara, G. Opposits, T. Pavelka, J. Benton

MOS capacitors, carrier lifetime, electron-hole recombination, semiconductor device measurement, semiconductor epitaxial layers, Silicon (Si), space-charge limited conduction

R.J. Hillard, P.Y. Hung, W. Chism, C.W. Ye, W.H. Howland, L.C. Tan, C.E. Kalnas

Dielectrics, Dielectric thin films, Electrical properties, Elasticity, Dielectric properties

D. Marinskiy, J. Lagowski, J. D’Amico, A. Findlay, L. Jastrzebski

doping, Mercury (element), Capacitance, Electric measurements, Semiconductor surfaces

A. Savtchouk, E. Oborina, A.M. Hoff, J. Lagowski

doping, Non-Contact Measurement, silicon carbide (SiC)

M. Yil-Koski, M. Palokangas, A. Haarahiltunen, H. Vainöla, J. Storgards, H. Holmberg, J. Sinkkonen

recombination of copper, Microwave Photoconductive Decay (μ-PCD), high-intensity bias light, interstitial copper, Ham's kinetics, Si–SiO2 interface

D.K. Schröder

Silicon (Si), Electric measurements, Metal–insulator–semiconductor structures, Surface and interface states, Contact potential, Work function, Epitaxial silicon

R.J. Hillard, W.H. Howland, R.G. Mazur, W. Ye, N.K. Variam

MOSFET, carrier density, doping profile, Ion Implantation, process monitoring, semiconductor device measurement

A. Danel, C.L. Tsai, K. Shanmugasundaram, F. Tardif, E. Kamieniecki, J. Ruzyllo

Lamp cleaning, Organic contamination, Volatile contaminants, hydrocarbons

P. Edelman, J. Lagowski, A. Savtchouk, M. Wilson, A. Aleynikov, D. Marinskiy, J. Navarro

Dielectrics, leakage, Oxide thickness, Non-contact, Mapping, corona

J.E. Steinle

Cs. Kovacsics

Silicon

H. Takato, I. Sakata, R. Shimokawa

surface passivation, quinhydrone/ethanol treatment, Microwave Photoconductive Decay (μ-PCD)

H-J. Schulze, A. Frohnmeyer, F.-J. Niedernostheide, F. Hille, P. Tüttő, T. Pavelka, G. Wachutka

Silicon (Si), elemental semiconductors, carrier lifetime, photoconductivity

D. Marinskiy, J. Lagowski

Hydrogen, passivation, boron acceptor, wet etching, reactive ion etching, sputter deposition, metal contacts, Ar ion beam etching

J. Ackaert, Z. Wang, E. De Backer, P. Colson, P. Coppens

charging induced damage (CID), metal-insulator-metal-capacitor (MIMC)

M.B.I. Diaz, C. Haessler

M. Bail, J. Kentsch, R. Brendel, M. Schulz

carrier lifetime, infrared camera

H-J. Schulze, A. Frohnmeyer, F-J. Niedernostheide, F. Hille, P. Tüttő, T. Pavelka, G. Wachutka

carrier lifetime, Silicon (Si), high power device

H-J. Schulze, A. Frohnmeyer, F-J. Niedernostheide, B. Simmnacher, B.O. Kolbesen, P. Tüttő, T. Pavelka, G. Wachutka

transition metals, contamination, carrier lifetime, silicon defect density

B. Sandhu, T. Ogikubo, H. Goto, V. Csapó, T. Pavelka

DLTS, SIRM, Silicon (Si), Mo, Fe, deep levels, carrier lifetime

T. Pavelka, D.C. Gupta and G.A. Brown

Silicon (Si), epitaxial wafer, carrier lifetime, surface/interface recombination velocity

R.S. Santiesteban, D.K. DeBusk, D.A. Ramappa, W.M. Moller

boron, doping profile, elemental semiconductors, Ion Implantation, process monitoring, Silicon (Si), surface photovoltage

D. Marinskiy, J. Lagowski, M. Wilson, L. Jastrzebski, R. Santiesteban, K. Elshot

surface photovoltage, surface doping, Ion Implantation, doping, Electrodes, Oxides, Reflectivity, Silicon (Si), Capacitance, Diagnostics

A.F. Bello, S. Kher, D. Marinskiy

high-k dielectrics, BST, picosecond ultrasonics, COCOS, Electric measurements, Capacitance, Dielectric constant, Dielectric thin films

M. Wilson, J. Lagowski, L. Jastrzebski, A. Savtchouk, V. Faifer

COCOS, Dielectrics, Semiconductor device characterization, Dielectric thin films, Electric measurements, Contact potential

P.W. Mason, D.K. DeBusk, J.K. McDaniel, A.S. Oates, K.P. Cheung

integrated circuit reliability, integrated circuit yield, Plasma materials processing

A. Frohnmeyer, F.-J. Niedernostheide, H.-J. Schulze, P. Tüttő, T. Pavelka, G. Wachutka

J.E. Steinle

M Wilson, J Lagowski, A Savtchou, D Marinskiy, L Jastrzebski, J D'amico

corona charge, defect inspection, Non-Contact Measurement

John D'Amico, Lubek Jastrzebski, Marshall Wilson, Alexandre Savtchouk

COCOS, heavy metal contamination

C. Cowache, P. Boelen, I. Kashkoush, P Besson, F. Tardif

pre-gate cleaning, particle removal, metal removal, surface microroughness, surface passivation

T. Pavelka, A. Tóth, G. Bayer

recombination center, Microwave Photoconductive Decay (μ-PCD), surface photovoltage

T. Pavelka, Z. Batari

lifetime, SOI, EPI

M. Yli-Koski, J. Mellin, V. Ovchinnikov

Gettering, Phosphorous Ion Implantation, Silicon (Si), surface photovoltage

D.K. DeBusk, A.M. Hoff

noncontact metrology, surface photovoltage, Contact Potential Difference (CPD), COCOS

J.P. Tower, E. Kamieniecki, M.C. Nguyen, A. Danel

doping, Silicon (Si), Wafer manufacturing, Epitaxy

M. Wilson, J. Lagowski, A. Savtchouk, L. Jastrebski, J. D'Amico, D.K. DeBusk, A. Buczkowski

COCOS, Interface structure, surface treatment, Corona effect, Voltage current curve, reliability, Oxide layer, Defect detection, Comparative study, Experimental result, Waveform

M. Wilson, J. Lagowski, A. Savtchouk, L. Jastrzebski, J. D'Amico

COCOS, corona, Interface Trap, stress induced leakage current, iron contamination, Contact Potential Difference (CPD)

D. Marinskiy, J. Lagowski, M. Wilson, A. Savtchouk, L. Jastrzebski, D. DeBusk

Small signal non-contact ac-SPV, near surface doping (NSD), chopping frequency, submicron penetration depth

D.A. Ramappa, W.B. Henley

diffusion, iron, silicon dioxide

D.A. Ramappa, W.B. Henley

copper contamination, breakdown, reliability, thin silicon gate oxide

W.B. Henley, D.A. Ramappa, L. Jastrezbski

Copper (Cu), Silicon (Si), diffusion, carrier lifetime, iron

J.E. Steinle

Piotr Edelman, A Savchouk, M Wilson, Lubek Jastrzebski, Jacek J Lagowski, Christopher Nauka, Shawming Ma, Andrew M Hoff, Damon K DeBusk

COCOS, defects, full wafer mapping, Interface, Non-Contact Measurement, surface doping

RJ Hillard, RG Mazur, JC Sherbondy, L Peitersen, M Wilson, R Herlocher

Electrical properties, mercury probe, Oxides, semiconductor

T. Pavelka, D.C. Gupta, F.R. Bacher, W.M. Hughes

carrier lifetime, surface photovoltage, Microwave Photoconductive Decay (μ-PCD), injection level, surface recombination, surface passivation

P. Edelman, V. Faifer, J. Lagowski

A. Danel, F. Tardif, G. Kamarinos

Doping deactivation, Surface Charge Profiler (SCP), Boron-doped silicon, Hydrogen, Copper (Cu)